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Si3443BDV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.060 at V GS = - 4.5 V
0.090 at V GS = - 2.7 V
0.100 at V GS = - 2.5 V
TSOP-6
I D (A)
- 4.7
- 3.8
- 3.7
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
(4) S
Top V iew
1
6
3 mm
2
3
5
4
(3) G
2.85 mm
Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free)
Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D
Part Marking Code:
3B
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 20
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 4.7
- 3.8
- 20
- 3.6
- 2.8
A
Continuous Source Current (Diode Conduction) a
I S
- 1.7
- 0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
2.0
1.3
- 55 to 150
1.1
0.7
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
50
90
30
62.5
110
36
°C/W
Notes
a. Surface Mounted on FR4 board, t ≤ 5 s.
For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm
Document Number: 72749
S-09-0660-Rev. C, 20-Apr-09
www.vishay.com
1
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